Fabrication and characterization of high performance...

Journal of Semiconductors 2011 / 06 Vol. 32; Iss. 6

Fabrication and characterization of high performance AlGaN/GaN HEMTs on sapphire with silicon nitride passivation

Zhang, Renping, Yan, Wei, Wang, Xiaoliang, Yang, Fuhua
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Volume:
32
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/32/6/064001
Date:
June, 2011
File:
PDF, 438 KB
english, 2011
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