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Influence of Isoelectronic Te Doping on the Physical Properties of ZnO Films Grown by Molecular-Beam Epitaxy
Park, Seung-Hwan, Minegishi, Tsutomu, Oh, Dong-Cheol, Kim, Dong-Jin, Chang, Ji-Ho, Yao, Takafumi, Taishi, Toshinori, Yonenaga, IchiroVolume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.52.055501
Date:
May, 2013
File:
PDF, 595 KB
english, 2013