A Charge-Trap Memory Device with a Composition-Modulated...

Chinese Physics Letters 2010 / 06 Vol. 27; Iss. 6

A Charge-Trap Memory Device with a Composition-Modulated Zr-Silicate High- k Dielectric Multilayer Structure

Shi-Cheng, Lv, Zhong-Yang, Ge, Yue, Zhou, Bo, Xu, Li-Gang, Gao, Jiang, Yin, Yi-Dong, Xia, Zhi-Guo, Liu
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Volume:
27
Language:
english
Journal:
Chinese Physics Letters
DOI:
10.1088/0256-307X/27/6/068502
Date:
June, 2010
File:
PDF, 448 KB
english, 2010
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