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Erratum: “Study of Novel Floating-Gate Oxide Semiconductor Memory Using Indium–Gallium–Zinc Oxide for Low-Power System-on-Panel Applications”
Yamauchi, Yoshimitsu, Kamakura, Yoshinari, Isagi, Yousuke, Matsuoka, Toshimasa, Malotaux, SatoshiVolume:
53
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.53.089201
Date:
August, 2014
File:
PDF, 117 KB
english, 2014