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Comparison of electron transmittances and tunneling currents in an anisotropic TiN x /HfO 2 /SiO 2 /p-Si(100) metal—oxide—semiconductor (MOS) capacitor calculated using exponential- and Airy-wavefunction approaches and a transfer matrix method
Noor, Fatimah A, Abdullah, Mikrajuddin, Sukirno,, Khairurrijal,Volume:
31
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/31/12/124002
Date:
December, 2010
File:
PDF, 403 KB
english, 2010