Characterization of Epitaxial Si:C:P and Si:P Layers for...

ECS Transactions 2014 / 08 Vol. 64; Iss. 6

Characterization of Epitaxial Si:C:P and Si:P Layers for Source/Drain Formation in Advanced Bulk FinFETs

Rosseel, E., Profijt, H. B., Hikavyy, A. Y., Tolle, J., Kubicek, S., Mannaert, G., L'abbe, C., Wostyn, K., Horiguchi, N., Clarysse, T., Parmentier, B., Dhayalan, S., Bender, H., Maes, J. W., Mehta, S.
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Volume:
64
Language:
english
Journal:
ECS Transactions
DOI:
10.1149/06406.0977ecst
Date:
August, 2014
File:
PDF, 519 KB
english, 2014
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