An improvement to computational efficiency of the drain...

Chinese Physics B 2011 / 09 Vol. 20; Iss. 9

An improvement to computational efficiency of the drain current model for double-gate MOSFET

Zhou, Xing-Ye, Zhang, Jian, Zhou, Zhi-Ze, Zhang, Li-Ning, Ma, Chen-Yue, Wu, Wen, Zhao, Wei, Zhang, Xing
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Volume:
20
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/20/9/097304
Date:
September, 2011
File:
PDF, 380 KB
english, 2011
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