Model and analysis of drain induced barrier lowering effect for 4H-SiC metal semiconductor field effect transistor
Quan-Jun, Cao, Yi-Men, Zhang, Li-Xin, JiaVolume:
18
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/18/10/058
Date:
October, 2009
File:
PDF, 593 KB
2009