The effect of substrate doping on the flatband and threshold voltages of a strained-Si pMOSFET
Wang, Bin, Zhang, He-Ming, Hu, Hui-Yong, Zhang, Yu-Ming, Zhou, Chun-Yu, Wang, Guan-Yu, Li, Yu-ChenVolume:
22
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/22/2/028503
Date:
February, 2013
File:
PDF, 392 KB
english, 2013