Ultralow Resistance Ohmic Contacts for p-Channel InGaSb...

IEEE Electron Device Letters 2015 / 6 Vol. 36; Iss. 6

Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors

Guo, Luke W., Lu, Wenjie, Bennett, Brian R., Boos, John Brad, Alamo, Jesus A. del
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Volume:
36
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2015.2421337
Date:
June, 2015
File:
PDF, 538 KB
english, 2015
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