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Structure design and film process optimization for metal-gate stress in 20 nm nMOS devices
Fu, Zuozhen, Yin, Huaxiang, Ma, Xiaolong, Chai, Shumin, Gao, Jianfeng, Chen, DapengVolume:
34
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/34/6/066002
Date:
June, 2013
File:
PDF, 70 KB
english, 2013