Effect of Stacking Faults in Triangular Defects on 4H-SiC...

Japanese Journal of Applied Physics 2013 / 04 Vol. 52; Iss. 4S

Effect of Stacking Faults in Triangular Defects on 4H-SiC Junction Barrier Schottky Diodes

Konishi, Kazuya, Nakata, Shuhei, Nakaki, Yoshiyuki, Nakao, Yukiyasu, Nagae, Akemi, Tanaka, Takanori, Nakamura, Yu, Toyoda, Yoshihiko, Sumitani, Hiroaki, Oomori, Tatsuo
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Volume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.52.04CP05
Date:
April, 2013
File:
PDF, 489 KB
english, 2013
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