Carbon, oxygen and intrinsic defect interactions in...

Semiconductor Science and Technology 2011 / 10 Vol. 26; Iss. 10

Carbon, oxygen and intrinsic defect interactions in germanium-doped silicon

Londos, C A, Sgourou, E N, Chroneos, A, Emtsev, V V
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Volume:
26
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/26/10/105024
Date:
October, 2011
File:
PDF, 141 KB
english, 2011
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