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Comparative study of different properties of GaN films grown on (0001) sapphire using high and low temperature AlN interlayers
Jun-Shuai, Xue, Yue, Hao, Jin-Cheng, Zhang, Jin-Yu, NiVolume:
19
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/19/5/057203
Date:
May, 2010
File:
PDF, 197 KB
english, 2010