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A study on the degradation mechanism of InGaZnO thin-film transistors under simultaneous gate and drain bias stresses based on the electronic trap characterization
Jeong, Chan-Yong, Lee, Daeun, Song, Sang-Hun, Kim, Jong In, Lee, Jong-Ho, Kwon, Hyuck-InVolume:
29
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/29/4/045023
Date:
April, 2014
File:
PDF, 1.12 MB
english, 2014