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Partial-SOI high voltage P-channel LDMOS with interface accumulation holes
Wu, Li-Juan, Hu, Sheng-Dong, Luo, Xiao-Rong, Zhang, Bo, Li, Zhao-JiVolume:
20
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/20/10/107101
Date:
October, 2011
File:
PDF, 170 KB
english, 2011