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Minority carrier properties of carbon-doped GaInAsN bipolar transistors
Welser, R E, Setzko, R S, Stevens, K S, Rehder, E M, Lutz, C R, Hill, D S, Zampardi, P JVolume:
16
Language:
english
Journal:
Journal of Physics: Condensed Matter
DOI:
10.1088/0953-8984/16/31/025
Date:
August, 2004
File:
PDF, 238 KB
english, 2004