Effects of Insulated Gate on Ion Implanted InSb p...

Effects of Insulated Gate on Ion Implanted InSb p + n Junctions

Fujisada, Hiroyuki, Sasase, Takafumi
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Volume:
23
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.23.L162
Date:
March, 1984
File:
PDF, 418 KB
1984
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