Influence of gate-source/drain misalignment on the...

Journal of Semiconductors 2013 / 04 Vol. 34; Iss. 4

Influence of gate-source/drain misalignment on the performance of bulk FinFETs by a 3D full band Monte Carlo simulation

Wang, Juncheng, Du, Gang, Wei, Kangliang, Zeng, Lang, Zhang, Xing, Liu, Xiaoyan
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Volume:
34
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/34/4/044005
Date:
April, 2013
File:
PDF, 780 KB
english, 2013
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