Averaged hole mobility model of biaxially strained Si

Journal of Semiconductors 2013 / 08 Vol. 34; Iss. 8

Averaged hole mobility model of biaxially strained Si

Song, Jianjun, Zhu, He, Yang, Jinyong, Zhang, Heming, Xuan, Rongxi, Hu, Huiyong
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Volume:
34
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/34/8/082003
Date:
August, 2013
File:
PDF, 647 KB
english, 2013
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