State Transition of a Defect Causing Random-Telegraph-Noise...

Japanese Journal of Applied Physics 2013 / 11 Vol. 52; Iss. 11R

State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO 2 Films in a Metal–Oxide–Silicon Structure

Ishida, Takeshi, Tega, Naoki, Mori, Yuki, Miki, Hiroshi, Mine, Toshiyuki, Kume, Hitoshi, Torii, Kazuyoshi, Yamada, Ren-ichi, Shiraishi, Kenji
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Volume:
52
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.52.110203
Date:
November, 2013
File:
PDF, 794 KB
english, 2013
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