Research on total-dose hardening for H-gate PD...

Chinese Physics C 2008 / 02 Vol. 32; Iss. 2

Research on total-dose hardening for H-gate PD NMOSFET/SIMOX by ion implanting into buried oxide

Cong, Qian, Zheng-Xuan, Zhang, Feng, Zhang, Cheng-Lu, Lin
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Volume:
32
Language:
english
Journal:
Chinese Physics C
DOI:
10.1088/1674-1137/32/2/011
Date:
February, 2008
File:
PDF, 1.31 MB
english, 2008
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