A low on-resistance SOI LDMOS using a trench gate and a...

Journal of Semiconductors 2012 / 07 Vol. 33; Iss. 7

A low on-resistance SOI LDMOS using a trench gate and a recessed drain

Ge, Rui, Luo, Xiaorong, Jiang, Yongheng, Zhou, Kun, Wang, Pei, Wang, Qi, Wang, Yuangang, Zhang, Bo, Li, Zhaoji
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Volume:
33
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/33/7/074005
Date:
July, 2012
File:
PDF, 893 KB
english, 2012
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