Polysilicon Etchback Plasma Process Using HBr, Cl[sub 2], and SF[sub 6] Gas Mixtures for Deep-Trench Isolation
Yeom, Geun-YoungVolume:
139
Year:
1992
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.2069260
File:
PDF, 1.10 MB
english, 1992