Monomethylsilane as a New Dopant Precursor for n-Type GaN Grown by MOVPE
Tomita, Kazuyoshi, Itoh, Kenji, Kachi, Tetsu, Tadano, HiroshiVolume:
264-268
Year:
1998
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.264-268.1141
File:
PDF, 270 KB
1998