High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on...

Materials Science Forum 2005 Vol. 483-485

High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material

Sveinbjörnsson, Einar Ö., Ólafsson, H.Ö., Gudjónsson, G., Allerstam, Fredrik, Nilsson, Per Åke, Syväjärvi, Mikael, Yakimova, Rositza, Hallin, Christer, Rödle, T., Jos, R.
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Volume:
483-485
Year:
2005
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.483-485.841
File:
PDF, 189 KB
english, 2005
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