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Molecular Beam Epitaxy study of a common a-GeO2 interfacial...

MRS Proceedings 2009 / 1 Vol. 1155

Molecular Beam Epitaxy study of a common a-GeO2 interfacial passivation layer for Ge- and GaAs-based MOS heterostructures

Merckling, Clement, Penaud, Julien, Bellenger, Florence, Kohen, David, Pourtois, Geoffrey, Brammertz, Guy, Scarrozza, Marco, El Kazzi, Mario, Houssa, Michel, Dekoster, Johan, Caymax, Matty, Meuris, Ma
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Volume:
1155
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-1155-C06-07
Date:
January, 2009
File:
PDF, 1.13 MB
english, 2009
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