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Effect of III/V ratio on the polarity of AlN and GaN layers grown in the metal rich growth regime on Si(111) by plasma assisted molecular beam epitaxy
Agrawal, Manvi, Radhakrishnan, K., Dharmarasu, Nethaji, Pramana, Stevin SnelliusVolume:
54
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.54.065701
Date:
June, 2015
File:
PDF, 2.20 MB
english, 2015