Non-Arrhenius conduction due to the interface-trap-induced...

Journal of Applied Physics 2015 / 02 Vol. 117; Iss. 5

Non-Arrhenius conduction due to the interface-trap-induced disorder in X-doped amorphous In-X-Zn oxides thin-film transistors

Benwadih, Mohammed, Chroboczek, J. A., Ghibaudo, Gérard, Coppard, Romain, Vuillaume, Dominique
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Volume:
117
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4907681
Date:
February, 2015
File:
PDF, 1.18 MB
english, 2015
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