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Simulation of High-Pressure Oxidation of Silicon Based on the Interfacial Silicon Emission Model
Uematsu, Masashi, Kageshima, Hiroyuki, Shiraishi, KenjiVolume:
39
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.39.L952
Date:
October, 2000
File:
PDF, 49 KB
english, 2000