Simulation of High-Pressure Oxidation of Silicon Based on...

Japanese Journal of Applied Physics 2000 / 10 Vol. 39; Iss. Part 2, No

Simulation of High-Pressure Oxidation of Silicon Based on the Interfacial Silicon Emission Model

Uematsu, Masashi, Kageshima, Hiroyuki, Shiraishi, Kenji
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
39
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.39.L952
Date:
October, 2000
File:
PDF, 49 KB
english, 2000
Conversion to is in progress
Conversion to is failed