Effect of Interfacial Localization of Phosphorus on Electrical Properties and Reliability of 4H-SiC MOS Devices
Akagi, Tsuyoshi, Yano, Hiroshi, Hatayama, Tomoaki, Fuyuki, TakashiVolume:
740-742
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.740-742.695
Date:
January, 2013
File:
PDF, 315 KB
english, 2013