Long-Term Characterization of 6H-SiC Transistor Integrated...

MRS Proceedings 2008 / 1 Vol. 1069

Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500 °C

Neudeck, Philip, Spry, David J., Chen, Liang-Yu, Chang, Carl W., Beheim, Glenn M., Okojie, Robert S., Evans, Laura J., Meredith, Roger D., Ferrier, Terry L., Krasowski, Michael J., Prokop, Norman F.
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Volume:
1069
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-1069-D11-02
Date:
January, 2008
File:
PDF, 579 KB
english, 2008
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