Majority Traps Observed in H+- or He+-Implanted Al-Doped 6H-SiC by Admittance and Deep Level Transient Spectroscopy
Reshanov, Sergey A., Klettke, O., Pensl, GerhardVolume:
433-436
Year:
2003
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.433-436.379
File:
PDF, 226 KB
english, 2003