Homoepitaxial Growth of 4H-SiC Using CH3Cl Carbon Precursor

Materials Science Forum 2005 Vol. 483-485

Homoepitaxial Growth of 4H-SiC Using CH3Cl Carbon Precursor

Koshka, Yaroslav, Lin, Huang De, Melnychuck, Galyna, Mazzola, Michael S., Wyatt, Jeffery L.
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Volume:
483-485
Year:
2005
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.483-485.81
File:
PDF, 359 KB
english, 2005
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