Defect Reduction and Its Mechanism of Selective Ge Epitaxy...

MRS Proceedings 2007 / 1 Vol. 994

Defect Reduction and Its Mechanism of Selective Ge Epitaxy in Trenches on Si(001) Substrates Using Aspect Ratio Trapping

Park, Ji-Soo, Bai, J., Curtin, M., Adekore, B., Cheng, Z., Carroll, M., Dudley, M., Lochtefeld, A.
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Volume:
994
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-0994-F10-05
Date:
January, 2007
File:
PDF, 1.46 MB
english, 2007
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