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Comparison for Thermoelectric Properties of BiTe Based Semiconductor Processed by the Mechanical Alloying and the High Pressure Torsion after Melt Grown by the Vertical Bridgman Method
Hasezaki, Kazuhiro, Ashida, Maki, Hamachiyo, Takashi, Matsunoshita, Hirotaka, Horita, ZenjiVolume:
638-642
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.638-642.1923
Date:
January, 2010
File:
PDF, 96 KB
english, 2010