Optimization of Poly-silicon Process for 3C-SiC Based MOS...

Optimization of Poly-silicon Process for 3C-SiC Based MOS Devices

Esteve, Romain, Schoner, Adolf, Reshanov, Sergey A., Zetterling, Carl-Mikael
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Volume:
1246
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-1246-B06-04
Date:
January, 2010
File:
PDF, 139 KB
english, 2010
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