Reduction of Structural Defects in Ge Epitaxially Grown on...

Solid State Phenomena 2013 / 10 Vol. 205-206

Reduction of Structural Defects in Ge Epitaxially Grown on Nano-Structured Si Islands on SOI Substrate

Zaumseil, Peter, Yamamoto, Yuji, Schubert, Markus Andreas, Schroeder, Thomas, Tillack, Bernd
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Volume:
205-206
Language:
english
Journal:
Solid State Phenomena
DOI:
10.4028/www.scientific.net/SSP.205-206.400
Date:
October, 2013
File:
PDF, 3.74 MB
english, 2013
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