Epitaxial Growth of GaN on Silicon Substrates by...

Materials Science Forum 1998 Vol. 264-268

Epitaxial Growth of GaN on Silicon Substrates by Low-Pressure MOCVD using AlAs, AlAs/GaAs, and AIN Buffer Layers

Strittmatter, A., Krost, A., Schatke, K., Iseri, Y., Bläsing, J., Christen, J.
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Volume:
264-268
Year:
1998
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.264-268.1145
File:
PDF, 435 KB
1998
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