Growth of Epitaxial β-SiC at the SiO[sub 2]/Si Interface as...

Journal of The Electrochemical Society 2002 Vol. 149; Iss. 4

Growth of Epitaxial β-SiC at the SiO[sub 2]/Si Interface as a Result of Annealing in CO

Krafcsik, O. H., Josepovits, K. V., Tóth, L., Pécz, B., Deák, P.
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Volume:
149
Year:
2002
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.1461381
File:
PDF, 522 KB
english, 2002
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