![](/img/cover-not-exists.png)
X-Ray Photoelectron Spectroscopy of Gate-Quality Silicon Oxynitride Films Produced by Annealing Plasma-Nitrided Si(100) in Nitrous Oxide
Chen, H.-W., Landheer, D., Chao, T.-S., Hulse, J. E., Huang, T.-Y.Volume:
148
Year:
2001
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.1374219
File:
PDF, 140 KB
english, 2001