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Growth of SiC on 6H-SiC {01-14} Substrates by Gas Source Molecular Beam Epitaxy
Nakamura, Shun-ichi, Hatayama, Tomoaki, Kimoto, Tsunenobu, Fuyuki, Takashi, Matsunami, HiroyukiVolume:
338-342
Year:
2000
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.338-342.201
File:
PDF, 430 KB
english, 2000