Separation of Interface Traps and Oxide Charge in...

IEEE Transactions on Device and Materials Reliability 2015 / 6 Vol. 15; Iss. 2

Separation of Interface Traps and Oxide Charge in Ionization Damaged Silicon Bipolar Transistors Based on Experimental Observation

Li, Xingji, Liu, Chaoming, Yang, Jianqun
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Volume:
15
Language:
english
Journal:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/tdmr.2015.2423316
Date:
June, 2015
File:
PDF, 418 KB
english, 2015
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