Solution-processed SiO 2 gate...

RSC Advances 2015 Vol. 5; Iss. 45

Solution-processed SiO 2 gate insulator formed at low temperature for zinc oxide thin-film transistors

Jeong, Yesul, Pearson, Christopher, Kim, Hyun-Gwan, Park, Man-Young, Kim, Hongdoo, Do, Lee-Mi, Petty, Michael C.
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Volume:
5
Year:
2015
Language:
english
Journal:
RSC Adv.
DOI:
10.1039/C5RA02989A
File:
PDF, 606 KB
english, 2015
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