Investigations on SiN-Passivated Γ-Gate Al[sub 0.27]Ga[sub 0.73]N∕GaN High Electron Mobility Transistors
Lee, Ching-Sung, Kao, An-YungVolume:
157
Year:
2010
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.3269933
File:
PDF, 485 KB
english, 2010