Theoretical study of cesium and oxygen activation processes...

Materials Science in Semiconductor Processing 2015 / 11 Vol. 39

Theoretical study of cesium and oxygen activation processes on GaN (0001) surface

Shen, Yang, Chen, Liang, Su, Lingai, Dong, Yanyan, Qian, Yunsheng, Wang, Honggang, Wang, Meishan
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Volume:
39
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2015.04.023
Date:
November, 2015
File:
PDF, 711 KB
english, 2015
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