Charged Defect States at Silicon Grain Boundaries

Materials Science Forum 1986 Vol. 10-12

Charged Defect States at Silicon Grain Boundaries

Stützler, F.J., Tapfer, L., Queisser, H.J.
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Volume:
10-12
Year:
1986
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.10-12.229
File:
PDF, 386 KB
1986
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