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Development of Homoepitaxially Grown GaN Thin Film Layers on Freestanding Bulk m-plane Substrates by Metalorganic Chemical Vapor Deposition (MOCVD)
Jindal, Vibhu, Grandusky, James, Tripathi, Neeraj, Tungare, Mihir, Shahedipour-Sandvik, Fatemeh, Sandvik, Peter, Tilak, VinayakVolume:
1040
Language:
english
Journal:
MRS Proceedings
DOI:
10.1557/PROC-1040-Q01-08
Date:
January, 2007
File:
PDF, 4.83 MB
english, 2007