Fabrication of In x Ga 1−x N/GaN QDs with InAlGaN capping layer by coaxial growth on non-(semi-) polar n-GaN NWs using metal organic chemical vapor deposition for blue emission
Park, Ji-Hyeon, Mandal, Arjun, Um, Dae-Young, Kang, San, Lee, Da-som, Lee, Cheul-RoVolume:
5
Year:
2015
Language:
english
Journal:
RSC Adv.
DOI:
10.1039/C5RA06836C
File:
PDF, 4.33 MB
english, 2015