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Electron Mobility in Silicon Gate-All-Around [100]- and [110]-Directed Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor on (100)-Oriented Silicon-on-Insulator Substrate Extracted by Improved Split Capacitance–Voltage Method
Chen, Jiezhi, Saraya, Takura, Miyaji, Kousuke, Shimizu, Ken, Hiramoto, ToshiroVolume:
48
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.48.011205
Date:
January, 2009
File:
PDF, 237 KB
english, 2009